Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina et al. · Journal of Applied Physics · 1997 · 317 citations

Engineering, Materials Engineering, Materials Science +17

Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

F. Nava, E. Vittone, P. Vanni et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2003 · 120 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition

Tsunenobu Kimoto, Akira Itoh, H. Matsunami et al. · Applied Physics Letters · 1995 · 119 citations

Engineering, Materials Engineering, Materials Science +17

Nickel based ohmic contacts on SiC

Ts. Marinova, A. Kakanakova‐Georgieva, V. Krastev et al. · Materials Science and Engineering B · 1997 · 115 citations

Engineering, Electrical Engineering, Materials Science +12