E. Omotoso

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

E. Omotoso, W.E. Meyer, F.D. Auret et al. · Materials Science in Semiconductor Processing · 2015 · 59 citations

Semiconductor Technology, Richardson Constant, Electrical Engineering +5

Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

E. Omotoso, W.E. Meyer, F.D. Auret et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2015 · 34 citations

Electrical Engineering, Deep Levels, Engineering +6

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

V.E. Gora, A. Chawanda, C. Nyamhere et al. · Physica B Condensed Matter · 2017 · 32 citations

Materials Science, Materials Engineering, Electrical Engineering +6

Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density

Alexander T. Paradzah, F.D. Auret, M. J. Legodi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2015 · 29 citations

Nuclear Ceramic, Electrical Engineering, Mev Alpha-particle +5

Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC

E. Omotoso, W.E. Meyer, F.D. Auret et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2015 · 25 citations

Semiconductor Technology, Electrical Engineering, Nickel Schottky +7