Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory

Abstract

Resistive-switching memory (RRAM) based on metal oxide is currently considered as a possible candidate for future nonvolatile storage and storage-class memory. To explore possible applications of RRAM, the switching variability and the cycling endurance are key issues that must be carefully understood. To this purpose, we studied the switching variability and the endurance in pulsed regime for HfOx-based RRAM. We found that the resistance window, the set/reset variability, and the endurance are all controlled by the maximum voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">stop</sub> , which is applied during the negative-reset operation. We demonstrate that the endurance failure is triggered by a negative-set event, where the resistance suddenly decreases during the reset. Cycling endurance is studied as a function of time, compliance current and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">stop</sub> , allowing to develop an Arrhenius-law model, which is capable of predicting device lifetime under various conditions.