2002 · 12 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignVery-large-scale Integration LayoutCmos Fabrication ProcessesCritical Dimension ControlProcess Variation Analysis
This paper reports a new statistical methodology for controlling the spreads of the CD (critical dimension) distribution in the lithography process. Response surface functions (RSF) for the CD in line and arbitrary gap patterns are introduced. The method allows sensitivity analysis of whole gate patterns at CMOS cell level.