Publication | Closed Access
A 34 ns 256 Mb DRAM with boosted sense-ground scheme
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Citations
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References
2002
Year
Unknown Venue
EngineeringMemory DesignEmerging Memory TechnologyComputer ArchitectureMulti-channel Memory ArchitectureComputer MemoryHardware SecurityHigh-performance ArchitectureMemory DevicesActivated Memory MatsMb DramElectronic MemoryComputer EngineeringMagnetoresistive Random-access MemoryComputer ScienceMicroelectronicsMemory ReliabilityMemory ArchitectureData Retention TimeHardware AccelerationMb Cmos DramSemiconductor MemoryResistive Random-access Memory
This boosted sense-ground (BSG) scheme extends the data retention time of a 256 Mb CMOS DRAM. This scheme features a "L" bitline level slightly boosted to suppress sub-threshold current of unselected memory-cell access transistors in the activated memory mats for the sake of the effective negative gate-source voltage (Vgs).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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