University of Twente Research Information · 1995 · 10 citations · 2 references
Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsElectronic EngineeringCharged Device ModelNumerical SimulationApplied PhysicsBias Temperature InstabilityCircuit SimulationModeling And SimulationProtective PropertiesNmos Protection TransistorMicroelectronicsNmos TransistorsElectromagnetic Compatibility
The protective properties of NMOS transistors for the Charged Device Model have been investigated. With 2D device simulation it is shown that the base transition time is the limiting factor for CDM NMOS transistor protection. An improved compact transistor model accounting for intrinsic base resistance is presented.
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