Journal of Applied Physics · 2010 · 50 citations · 33 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopySemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesX-ray Photoelectron SpectroscopyBand AlignmentBand OffsetsElectrochemical DepositionHeterojunctionsHeterostructuresSemiconductor CharacterizationSemiconductor HeterojunctionsValence Band Structure
The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InSxOy. (4) CBD-SnS/ECD-InSxOy. The valence band offsets ΔEV of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74±0.3 eV, respectively.
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E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17