M. Parenteau - Concepedia

Author

M. Parenteau

Université de Sherbrooke

Also Known As

M. Parenteau, Martin Parenteau

Publications

617

Citations

H-Index

Concepts

All Affiliations

Université de Sherbrooke Department of National Defence National Research Council Canada

About

M. Parenteau is an author at Université de Sherbrooke specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	565
2	Applied Physics	9	9	565
3	Electrical Engineering	5	5	425
4	Natural Sciences	3	3	387
5	Materials Science	3	3	79

M. Parenteau

Publications

565

Citations

H-Index

Page 1

	Year	Citations
Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors M. Parenteau, C. Carlone Physical review. B, Condensed matter Optical MaterialsEngineeringAbsorption SpectroscopyElectronic PropertiesSpectroscopic Property	1990	340
Electron and neutron radiation-induced order effect in gallium arsenide Shyam M. Khanna, Chedly Rejeb, Anouar Jorio, IEEE Transactions on Nuclear Science SemiconductorsSemiconductor TechnologyIon ImplantationPhotoluminescenceEngineering	1993	40
Radiation induced carrier enhancement and intrinsic defect transformation in <i>n</i>-GaAs Anouar Jorio, Chedly Rejeb, M. Parenteau, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesElectronic Properties	1993	39
A mobility study of the radiation induced order effect in gallium arsenide Anouar Jorio, M. Parenteau, M. Aubin, IEEE Transactions on Nuclear Science Materials SciencePoint DefectGallium VacancyIon ImplantationEngineering	1994	36
Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide Anouar Jorio, Aiguo Wang, M. Parenteau, Physical review. B, Condensed matter Gallium VacancyOptical MaterialsEngineeringNuclear PhysicsFast Neutrons	1994	34
Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide Shyam M. Khanna, Anouar Jorio, C. Carlone, IEEE Transactions on Nuclear Science Materials ScienceGallium VacancyIon ImplantationEngineeringPhysics	1995	30
Damage coefficient associated with free exciton lifetime in GaAs irradiated with neutrons and electrons M. Parenteau, C. Carlone, Shyam M. Khanna Journal of Applied Physics Electrical EngineeringPhotoluminescenceEngineeringFree ExcitonPhysics	1992	20
Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing Anouar Jorio, C. Carlone, M. Parenteau, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringU BandOptoelectronic DevicesSemiconductors	1996	13
Time-resolved spectroscopy of irradiated n-GaAs M. Parenteau, C. Carlone, Denis Morris, IEEE Transactions on Nuclear Science EngineeringTime-resolved SpectroscopyDegradation ConstantsIon ImplantationOptical Spectroscopy	1997	13

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