1998 · 25 citations · 5 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignHigh-frequency Semiconductor DevicesMicrowave OscillatorsMixed-signal Integrated Circuit DesignOscillatorsRadio-frequency Integrated CircuitsCmos OscillatorsCmos Radio-frequency CircuitsPhase NoisePhase Noise AnalysisPower OutputRadio-frequency Integrated Circuit DesignVoltage ControlVoltage-controlled Oscillator Design
Two fully integrated and differential SiGe VCOs were designed for 5 and 17GHz wireless applications. The measured phase noise for the 5GHz VCO is -94dBc/Hz at 100kHz offset with a single-ended output power of -1dBm. It has a tuning range of 15% with a control voltage from 0 to 3V, and a figure of merit of -178.1dBc/Hz. The center frequency change is 3.3% over 200°C temperature and ±10% supply voltage variation. The 17GHz VCO exhibits a -4dBm single ended output power, a phase noise of -84dBc/Hz at 100kHz offset, and a figure of merit of -176.2dBc/Hz. It has a tuning range of 3.6%. Both circuits dissipate a total power of 66mW (22mW in core) from 3V.
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A SiGe HBT BiCMOS technology for mixed signal RF applications
D. Ahlgren, G. Freeman, S. Subbanna et al. · 2002 · 66 citations