IEEE Journal of Solid-State Circuits · 1998 · 83 citations · 6 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsBipolar TechnologyCmos Radio-frequency CircuitsDemodulationOscillator DevicesRadio-frequency DevicesRadio-frequency Integrated Circuit DesignRf Cmos DesignVoltage-controlled Oscillators
In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits.
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A simple model of feedback oscillator noise spectrum
D.B. Leeson · Proceedings of the IEEE · 1966 · 2.4K citations
An ultra low-power RF bipolar technology on glass
Rommert Dekker, Peter Baltus, M. van Deurzen et al. · 2002 · 72 citations