H.G.R. Maas

Substrate transfer for RF technologies

Rommert Dekker, Peter Baltus, H.G.R. Maas · IEEE Transactions on Electron Devices · 2003 · 84 citations · Full text

Engineering, Electrical Engineering, Manufacturing Processes +16

A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

Peter Baltus, A.G. Wagemans, Rommert Dekker et al. · IEEE Journal of Solid-State Circuits · 1998 · 83 citations · Full text

Engineering, Electrical Engineering, Low-power Design +16

An ultra low-power RF bipolar technology on glass

Rommert Dekker, Peter Baltus, M. van Deurzen et al. · 2002 · 72 citations

Engineering, Electrical Engineering, Materials Science +15

A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anything

A.G. Wagemans, P. Ballus, Rommert Dekker et al. · 2002 · 51 citations

Engineering, Electrical Engineering, Microelectronics +16

An ultra low power lateral bipolar polysilicon emitter technology on SOI

Rommert Dekker, W.T.A. van der Einden, H.G.R. Maas · 2002 · 31 citations

Engineering, Electrical Engineering, Low-power Design +16