A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anything

Abstract

A fully-integrated voltage controlled oscillator (VCO) and RF diversity receiver are fabricated in a bipolar IC technology called silicon-on-anything. With this silicon based technology it is possible to fabricate low-power transistors, as well as integrated inductors that have a quality factor of 225 at 1 GHz. The inductors in the VCO exhibit a maximum quality factor of 29 at 4 GHz, with a self-resonance frequency of 10.5 GHz.