An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel

Abstract

This letter proposes a novel collector trench insulated-gate bipolar transistor (IGBT) with an electron extraction channel formed on the collector side to enhance the electron extraction effect with a backside lithography process. TCAD simulation indicates that the new IGBT structure offers a turnoff fall time 74% lower than a conventional field-stop IGBT with a similar breakdown voltage, leakage current, threshold voltage, and forward current density, providing a new option for power electronic applications.