Tunnel Device Simulation
Tunnel Device Simulation is a computational modeling approach within semiconductor device simulation that specifically quantifies quantum mechanical tunneling phenomena in nanoscale electronic devices, distinguished by its focus on accurate representation of carrier transport through potential barriers via wavefunction penetration and non-local band-to-band transitions.
12
Publications
830
Citations
34
Authors
13
Institutions
Publications per year
2017–2026
1
Parents
12
1–5 of 12
34
2
h-index
2
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2
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1
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1–5 of 34
13
National University of Singapore
Singapore, Singapore
2 h-index
10 publications
284 citations
George Washington University
Washington, United States
1 h-index
2 publications
86 citations

TU Wien
Vienna, Austria
1 h-index
1 publications
384 citations
ESI Group (France)
Paris, France
1 h-index
1 publications
43 citations

Democritus University of Thrace
Komotini, Greece
1 h-index
1 publications
20 citations
Bundeswehr
Berlin, Germany
1 h-index
3 publications
417 citations
Hacettepe University
Ankara, Türkiye
1 h-index
1 publications
67 citations
Adıyaman University
Adıyaman, Türkiye
1 h-index
1 publications
32 citations
1–8 of 13
1 publications · 20 citations
1
h-index
1 publications · 18 citations
1
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1 publications · 384 citations
1
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1 publications · 39 citations
1
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1 publications · 67 citations
1
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1–5