Tunnel Device Simulation

Tunnel Device Simulation is a computational modeling approach within semiconductor device simulation that specifically quantifies quantum mechanical tunneling phenomena in nanoscale electronic devices, distinguished by its focus on accurate representation of carrier transport through potential barriers via wavefunction penetration and non-local band-to-band transitions.

12

Publications

830

Citations

34

Authors

13

Institutions

Publications per year

2017–2026

1

Authors

34

  1. YY
    Yee‐Chia Yeo

    National University of Singapore, Singapore

    2 publications · 65 citations

    2

    h-index

  2. CS
    Chen Shen

    Technische Universität Darmstadt, Germany

    2 publications · 65 citations

    2

    h-index

  3. GS
    Ganesh S. Samudra

    National University of Singapore, Singapore

    2 publications · 65 citations

    2

    h-index

  4. IG
    Ioannis G. Karafyllidis

    Democritus University of Thrace, Greece

    1 publications · 20 citations

    1

    h-index

  5. GH
    G.I. Haddad

    University of Michigan, United States

    1 publications · 18 citations

    1

    h-index

1–5 of 34

Venues

  1. Superlattices and Microstructures

    1 publications · 20 citations

    1

    h-index

  2. Journal of Applied Physics

    1 publications · 18 citations

    1

    h-index

  3. 1

    h-index

  4. 1

    h-index

  5. Computers and Geotechnics

    1 publications · 67 citations

    1

    h-index

1–5