Concepedia

Subthreshold Leakage

Subthreshold Leakage is a type of static power dissipation in MOSFET transistors that occurs due to the exponential tail of carrier distribution in the subthreshold region, where a small but non-zero current flows between source and drain even when the gate-to-source voltage is below the threshold voltage.

268

Publications

12K

Citations

804

Authors

235

Institutions

Publications per year

2017–2026

21

Variants

Subthreshold Current

Parents

Publications

268

Dual-threshold voltage techniques for low-power digital circuits

James Kao, Anantha P. Chandrakasan · IEEE Journal of Solid-State Circuits · 2000 · 439 citations

, , +17

A gate-level leakage power reduction method for ultra-low-power CMOS circuits

Jonathan Paul Halter, Farid N. Najm · 2002 · 304 citations

, , +17

Subthreshold leakage modeling and reduction techniques

James Kao, S. Narendra, Anantha P. Chandrakasan · Digest of technical papers/Digest of technical papers - IEEE/ACM International Conference on Computer-Aided Design · 2002 · 267 citations

, , +17

Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Gengchiau Liang, Neophytos Neophytou, Dmitri E. Nikonov et al. · IEEE Transactions on Electron Devices · 2007 · 260 citations

, , +17

Intrinsic MOSFET parameter fluctuations due to random dopant placement

Xinghai Tang, Vivek De, J.D. Meindl · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 1997 · 254 citations

, , +17

1–5 of 268

Authors

804

  1. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    14 publications · 1K citations

    13

    h-index

  2. DB
    David Blaauw

    University of Michigan, United States

    11 publications · 672 citations

    11

    h-index

  3. DS
    Dennis Sylvester

    University of Michigan, United States

    9 publications · 633 citations

    9

    h-index

  4. VK
    Volkan Kursun

    University of Wisconsin–Madison, United States

    7 publications · 225 citations

    7

    h-index

  5. DL
    Dongwoo Lee

    Harvard University, United States

    7 publications · 384 citations

    7

    h-index

1–5 of 804

Institutions

235

  1. Intel (United States)

    Santa Clara, United States

    16 h-index

    43 publications

    3.3K citations

  2. Purdue University West Lafayette

    West Lafayette, United States

    16 h-index

    64 publications

    4.3K citations

  3. University of Michigan

    Ann Arbor, United States

    13 h-index

    48 publications

    2.5K citations

  4. Massachusetts Institute of Technology

    Cambridge, United States

    13 h-index

    35 publications

    3.6K citations

  5. University of Waterloo

    Waterloo, Canada

    9 h-index

    20 publications

    977 citations

  6. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    8 h-index

    28 publications

    712 citations

  7. The University of Tokyo

    Tokyo, Japan

    8 h-index

    27 publications

    961 citations

  8. University of California, Santa Barbara

    Santa Barbara, United States

    7 h-index

    16 publications

    532 citations

1–8 of 235

Venues

  1. IEEE Transactions on Electron Devices

    28 publications · 1.7K citations

    20

    h-index

  2. IEEE Journal of Solid-State Circuits

    17 publications · 1.5K citations

    16

    h-index

  3. 16

    h-index

  4. IEEE Electron Device Letters

    9 publications · 428 citations

    9

    h-index

  5. Applied Physics Letters

    7 publications · 277 citations

    7

    h-index

1–5