Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Abstract

The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. Calculation of the bandstructure of nanoribbons using a single p <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">z</sub> -orbital tight-binding method and evaluation of the current-voltage characteristics of a nanoribbon MOSFET were used in a semiclassical ballistic model. The authors find that semiconducting ribbons a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. The calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications