Radiation-hardened Memory

Radiation-Hardened Memory is a type of electronic memory device engineered to maintain functionality and data integrity in environments with high levels of ionizing radiation, distinguished from conventional memory by its resilience to radiation-induced errors and degradation.

205

Publications

8.5K

Citations

723

Authors

225

Institutions

Publications per year

2017–2026

69

Variants

Radiation-hardened Memories

Authors

723

  1. RK
    R. Koga

    The Aerospace Corporation, United States

    8 publications · 254 citations

    8

    h-index

  2. LX
    Liyi Xiao

    Harbin Institute of Technology, China

    7 publications · 594 citations

    7

    h-index

  3. ZL
    Zhiting Lin

    Anhui University, China

    6 publications · 320 citations

    7

    h-index

  4. AI
    Aminul Islam

    Birla Institute of Technology, Mesra, India

    5 publications · 292 citations

    7

    h-index

  5. XW
    Xiulong Wu

    Anhui University, China

    6 publications · 320 citations

    7

    h-index

1–5 of 723

Venues

  1. IEEE Transactions on Nuclear Science

    53 publications · 3.3K citations

    28

    h-index

  2. 10

    h-index

  3. 7

    h-index

  4. 7

    h-index

  5. Microelectronics Journal

    4 publications · 107 citations

    5

    h-index

1–5