Program Cycling is a fundamental operational process in solid-state storage systems, specifically referring to the repeated action of writing and erasing data in non-volatile memory cells, distinguished by its finite endurance characteristics that directly impact device reliability and lifespan.
32
Publications
1.6K
Citations
175
Authors
42
Institutions
Publications per year
2017–2026
5
Parents
Publications
32
Recovery Effects in the Distributed Cycling of Flash Memories
Neal Mielke, Hanmant Belgal, A. Fazio et al. · 2006 · 133 citations
Engineering, Computer Engineering, Electrical Engineering +16
A new reliability model for post-cycling charge retention of flash memories
Hanmant Belgal, Nick Righos, I. Kalastirsky et al. · 2003 · 108 citations
Engineering, Computer Engineering, Electrical Engineering +15
1–5 of 32
Authors
175
- NM
5
h-index
- JV
4
h-index
- HB
3
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- NR
3
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- EL
3
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1–5 of 175
Institutions
42
Intel (United States)
Santa Clara, United States
6 h-index
26 publications
3.1K citations
IMEC
Leuven, Belgium
4 h-index
23 publications
506 citations
National Yang Ming Chiao Tung University
Hsinchu, Taiwan
3 h-index
9 publications
110 citations
STMicroelectronics (Italy)
Milan, Italy
2 h-index
7 publications
1.4K citations
Renesas Electronics (Japan)
Tokyo, Japan
2 h-index
16 publications
192 citations
Macronix International (Taiwan)
Hsinchu, Taiwan
2 h-index
17 publications
219 citations
Politecnico di Milano
Milan, Italy
1 h-index
3 publications
801 citations
University of Groningen
Groningen, The Netherlands
1 h-index
2 publications
44 citations
1–8 of 42
Venues
- IEEE Electron Device Letters
6 publications · 213 citations
6
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- IEEE Transactions on Electron Devices
4 publications · 77 citations
4
h-index
- IEEE Transactions on Device and Materials Reliability
3 publications · 447 citations
3
h-index
- IEEE Journal of Solid-State Circuits
1 publications · 12 citations
1
h-index
- Annals of Physical and Rehabilitation Medicine
1 publications · 17 citations
1
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1–5