Concepedia

Nonideal Capacitance Effects

Nonideal Capacitance Effects is a theoretical construct in semiconductor device physics that characterizes deviations from ideal MOS capacitor behavior due to physical phenomena such as interface traps, oxide charges, and mobility degradation, which alter the capacitance-voltage relationship.

32

Publications

1.2K

Citations

104

Authors

49

Institutions

Publications per year

2017–2026

6

Parents

Publications

32

The Interpretation of Non-Ideal Dielectric Admittance and Impedance Diagrams

A.K. Jonscher · physica status solidi (a) · 1975 · 214 citations

, , +17

Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors

Ahmedullah Aziz, Swapnadip Ghosh, Suman Datta et al. · IEEE Electron Device Letters · 2016 · 164 citations

, , +17

Progress and future prospects of negative capacitance electronics: A materials perspective

Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick · APL Materials · 2021 · 146 citations · Full text

, , +17

Oscillation effects in IGBT's related to negative capacitance phenomena

Ichiro Omura, Wolf Fïchtner, Hiromichi Ohashi · IEEE Transactions on Electron Devices · 1999 · 68 citations

, , +12

Detailed analysis of nonidealities in MOS fully integrated active RC filters based on balanced networks

M. Banu, Y. Tsividis · IEE Proceedings G (Electronic Circuits and Systems) · 1984 · 46 citations

, , +16

1–5 of 32

Authors

104

  1. MH
    Michael Hoffmann

    NaMLab (Germany), Germany

    2 publications · 169 citations

    2

    h-index

  2. TM
    Thomas Mikolajick

    NaMLab (Germany), Germany

    3 publications · 192 citations

    2

    h-index

  3. SS
    Stefan Slesazeck

    NaMLab (Germany), Germany

    2 publications · 169 citations

    2

    h-index

  4. AJ
    A. Jakubowski

    Virginia Tech, United States

    1 publications · 22 citations

    1

    h-index

  5. EH
    Eckart Hoene

    Fraunhofer Institute for Reliability and Microintegration, Germany

    1 publications · 35 citations

    1

    h-index

1–5 of 104

Institutions

49

  1. Technische Universität Dresden

    Dresden, Germany

    2 h-index

    3 publications

    192 citations

  2. NaMLab (Germany)

    Dresden, Germany

    2 h-index

    7 publications

    530 citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    2 h-index

    5 publications

    99 citations

  4. Stanford University

    Stanford, United States

    2 h-index

    3 publications

    46 citations

  5. Pennsylvania State University

    State College, United States

    1 h-index

    2 publications

    328 citations

  6. Odesa I. I. Mechnikov National University

    Odesa, Ukraine

    1 h-index

    2 publications

    22 citations

  7. Cairo University

    Giza, Egypt

    1 h-index

    1 publications

    16 citations

  8. STMicroelectronics (France)

    Montrouge, France

    1 h-index

    2 publications

    60 citations

1–8 of 49

Venues

  1. IEEE Electron Device Letters

    3 publications · 203 citations

    3

    h-index

  2. IEEE Transactions on Electron Devices

    3 publications · 114 citations

    3

    h-index

  3. Sensors and Actuators B Chemical

    1 publications · 11 citations

    1

    h-index

  4. Journal of The Electrochemical Society

    JES · 1 publications · 27 citations

    1

    h-index

  5. Organic Electronics

    1 publications · 14 citations

    1

    h-index

1–5