C.Y. Sung - Concepedia

Author

C.Y. Sung

IBM (United States)

Also Known As

C Sung, C. Sung, C. Y. Sung, C.-Y. Sung, C.Y (Chun-Yung) Sung, C.Y Sung, C.Y. Sung, C.y. Sung, Chao-Fu Sung

Publications

576

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center Advanced Micro Devices (Canada)Advanced Micro Devices (United States)University of Michigan

About

C.Y. Sung is an author at IBM (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	470
2	Applied Physics	8	8	352
3	Electrical Engineering	6	6	302
4	Computer Engineering	3	3	195
5	Materials Engineering	3	3	82

C.Y. Sung

Publications

470

Citations

H-Index

Page 1

	Year	Citations
High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography P. Agnello, T. Ivers, C. Warm, EngineeringVlsi DesignEnhanced StrainPorous Low-k BeolIntegrated Circuits	2006	115
Secondary nucleation of magnesium sulfate by fluid shear C.Y. Sung, Joseph Estrin, G. R. Youngquist AIChE Journal Materials ScienceSecondary NucleationEngineeringPhysicsMineral-fluid Interaction	1973	86
High-carrier-density electron dynamics in low-temperature-grown GaAs T. S. Sosnowski, Theodore B. Norris, H. H. Wang, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringRf Semiconductor	1997	72
Challenges and Opportunities for High Performance 32 nm CMOS Technology J.W. Sleight, Isaac Lauer, O. Dokumaci, EngineeringVlsi DesignRelaxed Pitch DesignsComputer ArchitectureInterconnect (Integrated Circuits)	2006	48
Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates K. L. Saenger, J. P. de Souza, Keith Fogel, Applied Physics Letters Materials ScienceMaterials EngineeringWafer Scale ProcessingEngineeringOrientation Substrates	2005	32
On the integration of CMOS with hybrid crystal orientations Min Yang, V. Chan, S.H. Ku, Electrical EngineeringEngineeringVlsi DesignIntegration IssuesNanoelectronics	2004	32
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy K. L. Saenger, J. P. de Souza, Keith Fogel, Journal of Applied Physics Materials ScienceMaterials EngineeringTrench EdgesEpitaxial GrowthEngineering	2007	27
Femtosecond intersubband relaxation and population inversion in stepped quantum well C.Y. Sung, Theodore B. Norris, Ali Afzali-Kushaa, Applied Physics Letters Quantum ScienceRoom TemperatureEngineeringPhysicsQuantum Technology	1996	23
Dual stress liner enhancement in hybrid orientation technology C. Sheraw, Min Yang, David Fried, EngineeringMechanical EngineeringResidual StressStructural OptimizationSilicon On Insulator	2005	23
Stress dependence and poly-pitch scaling characteristics of (110) PMOS drive current Bo Yang, Karen Nummy, A.M. Waite, Electrical EngineeringEngineeringStress DependenceMobility AdvantagePower Device	2007	12

Page 1