M.T. Fresina

High reliability InGaP/GaAs HBT

N. Pan, J. Elliott, Matthew Knowles et al. · IEEE Electron Device Letters · 1998 · 77 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

S. A. Stockman, A.W. Hanson, S. M. Lichtenthal et al. · Journal of Electronic Materials · 1992 · 57 citations

Electrical Engineering, Engineering, Applied Physics +5

A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

S. A. Stockman, A.W. Hanson, C. M. Colomb et al. · Journal of Electronic Materials · 1994 · 45 citations

Materials Science, Materials Engineering, Chemical Engineering +6

High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

M.T. Fresina, D.A. Ahmari, P.J. Mares et al. · IEEE Electron Device Letters · 1995 · 44 citations

Electrical Engineering, Excellent Dc, Engineering +9

High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base

D.A. Ahmari, M.T. Fresina, Q.J. Hartmann et al. · IEEE Electron Device Letters · 1996 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13