M.T. Fresina - Concepedia

Author

M.T. Fresina

University of Illinois Urbana-Champaign

Also Known As

M. Fresina, M. T. Fresina, M.T. Fresina, Michael T. Fresina

Publications

419

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign

About

M.T. Fresina is an author at University of Illinois Urbana-Champaign specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	368
2	Applied Physics	9	9	305
3	Electrical Engineering	9	9	303
4	Chemical Engineering	1	1	45
5	Chemistry	1	1	45

M.T. Fresina

Publications

368

Citations

H-Index

Page 1

	Year	Citations
High reliability InGaP/GaAs HBT N. Pan, J. Elliott, Matthew Knowles, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1998	77
Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD S. A. Stockman, A.W. Hanson, S. M. Lichtenthal, Journal of Electronic Materials Electrical EngineeringEngineeringApplied PhysicsCarbon-doped GaasCarbon Acceptors	1992	57
A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs S. A. Stockman, A.W. Hanson, C. M. Colomb, Journal of Electronic Materials Materials ScienceMaterials EngineeringChemical EngineeringCci4-doped IngaasEngineering	1994	45
High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors M.T. Fresina, D.A. Ahmari, P.J. Mares, IEEE Electron Device Letters Electrical EngineeringExcellent DcEngineeringOscillatorsNoise Performance	1995	44
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base D.A. Ahmari, M.T. Fresina, Q.J. Hartmann, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	1996	43
Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by <i>ex</i> <i>situ</i> annealing and the effects on device characteristics Q.J. Hartmann, H. Hwangbo, A. Yung, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1996	27
High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide S. L. Jackson, M.T. Fresina, J. E. Baker, Applied Physics Letters Materials ScienceSemiconductorsHigh-efficiency Silicon DopingSibr4 SourceEngineering	1994	20
Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide M.S. Heins, Douglas W. Barlage, M.T. Fresina, Electrical EngineeringEngineeringRf SemiconductorOscillatorsHigh-frequency Device	2002	18
Effect of collector design on the d.c. characteristics of heterojunction bipolar transistors Q.J. Hartmann, M.T. Fresina, D.A. Ahmari, Solid-State Electronics Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityApplied Physics	1995	16
Analysis of the offset voltage of InGaP/GaAs single-, double-, and composite double-heterojunction bipolar transistors M.T. Fresina, Q.J. Hartmann, D.A. Ahmari, Journal of Applied Physics Electrical EngineeringThin SpacerEngineeringElectronic EngineeringApplied Physics	1995	11

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