Q.J. Hartmann

High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

M.T. Fresina, D.A. Ahmari, P.J. Mares et al. · IEEE Electron Device Letters · 1995 · 44 citations

Electrical Engineering, Excellent Dc, Engineering +9

High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base

D.A. Ahmari, M.T. Fresina, Q.J. Hartmann et al. · IEEE Electron Device Letters · 1996 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

D.A. Ahmari, G. Raghavan, Q.J. Hartmann et al. · IEEE Transactions on Electron Devices · 1999 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by <i>ex</i> <i>situ</i> annealing and the effects on device characteristics

Q.J. Hartmann, H. Hwangbo, A. Yung et al. · Applied Physics Letters · 1996 · 27 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Shawn Thomas, Eric S. Johnson, Clarence J. Tracy et al. · IEEE Electron Device Letters · 2005 · 22 citations

Electrical Engineering, Engineering, Rf Semiconductor +11