G. Raghavan - Concepedia

Author

G. Raghavan

Indira Gandhi Centre for Atomic Research ORCID

Also Known As

G Raghavan, G Vijaya Raghavan, G, Raghavan, G. RAGHAVAN, G. Raghavan, Gopal Raghavan, Raghavan G., Raghavan, G.

Publications

902

Citations

H-Index

Concepts

All Affiliations

Indira Gandhi Centre for Atomic Research HRL Laboratories (United States)Massachusetts Institute of Technology Nokia (United States)Intel (United States)

About

G. Raghavan is an author at Indira Gandhi Centre for Atomic Research specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	637
2	Applied Physics	10	11	466
3	Computer Engineering	4	4	99
4	Chemical Engineering	1	1	18
5	Chemistry	1	1	12

G. Raghavan

Publications

799

Citations

H-Index

Page 1

	Year	Citations
Diffusion of copper through dielectric films under bias temperature stress G. Raghavan, Chien Chiang, Paul B. Anders, Thin Solid Films Materials ScienceElectrical EngineeringElectromigration TechniqueDielectric FilmsEngineering	1995	153
A 3.2-GHz second-order delta-sigma modulator implemented in InP HBT technology J.F. Jensen, G. Raghavan, A.E. Cosand, IEEE Journal of Solid-State Circuits Rf SemiconductorHigh-frequency DeviceData ConverterSecond-order ModulatorAnalog Design	1995	123
Modifying the nanocrystalline characteristics—structure, size, and surface states of copper oxide thin films by high-energy heavy-ion irradiation B. Balamurugan, B. R. Mehta, D.K. Avasthi, Journal of Applied Physics EngineeringMetal NanoparticlesNanostructure SynthesisNanoscale ScienceCu2o Thin Films	2002	122
Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry P. K. Giri, S. Tripurasundari, G. Raghavan, Journal of Applied Physics Optical MaterialsEngineeringOscillator Amplitude DecreasesSilicon On InsulatorIon-damaged Silicon	2001	41
Architecture, design, and test of continuous-time tunable intermediate-frequency bandpass delta-sigma modulators G. Raghavan, J.F. Jensen, J. Laskowski, IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringAnalog-to-digital ConverterCircuit DesignHigh-frequency Device	2001	40
Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior D.A. Ahmari, G. Raghavan, Q.J. Hartmann, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringHbt Delay-time AnalysisSmall-signal Behavior	1999	37
Indium phosphide ICs unleash the high-frequency spectrum G. Raghavan, M. Sokolich, W.E. Stanchina IEEE Spectrum Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronics	2000	32
From WiFi to WiMAX: Techniques for High-Level IP Reuse across Different OFDM Protocols Man Cheuk Ng, Muralidaran Vijayaraghavan, Nirav Dave, EngineeringWireless LanComputer ArchitectureHigh-level Ip ReuseCommunication Engineering	2007	27
A bandpass ΣΔ modulator with 92 dB SNR and center frequency continuously programmable from 0 to 70 MHz G. Raghavan, J.F. Jensen, R.H. Walden, RadarGain CalibrationEngineeringRadio FrequencyMixed-signal Integrated Circuit	2002	26
H.264 Decoder: A Case Study in Multiple Design Points Kermin Fleming, Chun‐Chieh Lin, Nirav Dave, EngineeringVideo Coding FormatMultimedia ProcessorComputer ArchitectureHardware Architecture	2008	25

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