Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

Abstract

This work describes the temperature dependence of the DC and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT's) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature dependence of both DC and high-frequency parameters are presented. An HBT delay-time analysis is also presented and justified empirically. In addition, the factors causing the decrease in f/sub T/ with temperature are described, and the variations in collector resistance and collector drift velocity with temperature are determined.