G.W. Ray

Microstructure and reliability of copper interconnects

Changsup Ryu, Kee-Won Kwon, Alvin L. S. Loke et al. · IEEE Transactions on Electron Devices · 1999 · 185 citations

Engineering, Cvd Cu, Chemical Deposition +17

Using a statistical metrology framework to identify systematic and random sources of die- and wafer-level ILD thickness variation in CMP processes

E. Chang, B.E. Stine, T. Maung et al. · 2002 · 46 citations

Engineering, Vlsi Design, Measurement +21

Interlevel Dielectric Failures in Copper/Low-k Structures

Glenn Alers, K. Jow, Roey Shaviv et al. · IEEE Transactions on Device and Materials Reliability · 2004 · 44 citations

Engineering, Inter-level Dielectric Layers, Interconnect (Integrated Circuits) +18

Kinetics study of the pressure dependence of the BrO + NO2 reaction at 298 K

Stanley P. Sander, G.W. Ray, Robert T. Watson · The Journal of Physical Chemistry · 1981 · 42 citations

Chemical Engineering, Molecular Sciences, Pressure Dependence +14

Kinetics study of the reactions of nitric oxide with oxygen fluoride, chlorine oxide, bromine oxide, and iodine oxide at 298 K

G.W. Ray, Robert T. Watson · The Journal of Physical Chemistry · 1981 · 38 citations

Altmetrics, Chemical Engineering, Chlorine Oxide +11