Concepedia

Author

J.L. Pelloie

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

J. L. Pelloie, J.-L Pelloie, J.-L. Pelloie, J.L. Pelloie, Jean-Luc Pelloie, Jean-luc Pelloie, Pelloie, J.-L.

97

Publications

1.1K

Citations

16

H-Index

53

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies AlternativesCEA GrenobleLaboratoire d'Électronique des Technologies de l'InformationCEA DAM Île-de-FranceDirection de la Recherche Technologique
JP

About

J.L. Pelloie is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

16

26

806

2

Applied Physics

13

16

656

3

Natural Sciences

2

2

58

4

Medicine

1

1

32

5

Chemistry

1

1

15

J.L. Pelloie

×

27

Publications

895

Citations

16

H-Index

YearCitations

Worst-case bias during total dose irradiation of SOI transistors

V. Ferlet-Cavrois, T. Colladant, Philippe Paillet,

IEEE Transactions on Nuclear Science

2000

134

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

C. Brisset, V. Ferlet-Cavrois, O. Flament,

IEEE Transactions on Nuclear Science

1996

92

A New Approach for SOI Devices Small-Signal Parameters Extraction

A. Bracale, V. Ferlet-Cavrois, N. Fel,

Analog Integrated Circuits and Signal Processing

2000

89

Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

Daniela Munteanu, Douglas Weiser, S. Cristoloveanu,

IEEE Transactions on Electron Devices

1998

69

Total dose induced latch in short channel NMOS/SOI transistors

V. Ferlet-Cavrois, Sébastien Quoizola, O. Musseau,

IEEE Transactions on Nuclear Science

1998

58

Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors

O. Musseau, V. Ferlet-Cavrois, J.L. Pelloie,

IEEE Transactions on Nuclear Science

2000

51

Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics

M. Dentan, E. Delagnes, N. Fourches,

IEEE Transactions on Nuclear Science

1993

43

Hot-carrier effects and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFETs

Shing-Hwa Renn, J.L. Pelloie, F. Balestra

IEEE Transactions on Electron Devices

1998

35

Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor

V. Ferlet-Cavrois, O. Musseau, J.L. Leray,

IEEE Transactions on Electron Devices

1997

32

A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFETs

Shing-Hwa Renn, C. Raynaud, J.L. Pelloie,

IEEE Transactions on Electron Devices

1998

31

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