J.L. Pelloie

Worst-case bias during total dose irradiation of SOI transistors

V. Ferlet-Cavrois, T. Colladant, Philippe Paillet et al. · IEEE Transactions on Nuclear Science · 2000 · 134 citations · Full text

Electrical Engineering, Charge Trapping, Total Dose Irradiation +7

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

C. Brisset, V. Ferlet-Cavrois, O. Flament et al. · IEEE Transactions on Nuclear Science · 1996 · 92 citations

Device Modeling, Electrical Engineering, Conventional Nmosfet +13

A New Approach for SOI Devices Small-Signal Parameters Extraction

A. Bracale, V. Ferlet-Cavrois, N. Fel et al. · Analog Integrated Circuits and Signal Processing · 2000 · 89 citations

Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

Daniela Munteanu, Douglas Weiser, S. Cristoloveanu et al. · IEEE Transactions on Electron Devices · 1998 · 69 citations

Device Modeling, Electrical Engineering, Engineering +13

Total dose induced latch in short channel NMOS/SOI transistors

V. Ferlet-Cavrois, Sébastien Quoizola, O. Musseau et al. · IEEE Transactions on Nuclear Science · 1998 · 58 citations

Device Modeling, Latch Effect, Electrical Engineering +10