J. Singh

Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films

John Hinckley, J. Singh · Physical review. B, Condensed matter · 1990 · 129 citations

Engineering, Degeneracy Splittings, Silicon On Insulator +17

Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs

Geok Ing Ng, D. Pavlidis, M. Jaffé et al. · IEEE Transactions on Electron Devices · 1989 · 60 citations

Materials Engineering, Experimental Characteristics, Electrical Engineering +14

Carrier velocity-field characteristics and alloy scattering potential in Si1−<i>x</i>Ge<i>x</i>/Si

S. H. Li, John Hinckley, J. Singh et al. · Applied Physics Letters · 1993 · 35 citations · Full text

Semiconductors, Materials Science, Semiconductor Technology +11

Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

Geok Ing Ng, D. Pavlidis, M. Quillec et al. · Applied Physics Letters · 1988 · 26 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Direct measurement of the Hall factor for holes in relaxed Si1−<i>x</i>Ge<i>x</i> (0&amp;lt;<i>x</i>&amp;lt;1)

Y. C. Chen, S. H. Li, P. Bhattacharya et al. · Applied Physics Letters · 1994 · 18 citations

Materials Science, Spintronics, Sige Varies +10