Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

M. Zhang, P. Bhattacharya, J. Singh, +1

Applied Physics Letters

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringAuger RecombinationEngineering +11

Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films

John Hinckley, J. Singh

Physical review. B, Condensed matter

EngineeringDegeneracy SplittingsSilicon On InsulatorBand GapSubstrate Composition +15

A role for mast cells in the progression of Duchenne muscular dystrophy?

J.Rafael M. Gorospe, Michael D. Tharp, John Hinckley, +2

Journal of the Neurological Sciences

MechanobiologySkeletal MuscleDuchenne Muscular DystrophyPhysiologyMast Cells +6

A InGaN/GaN quantum dot green (λ=524 nm) laser

Meng Zhang, Animesh Banerjee, Chi-Sen Lee, +2

Applied Physics Letters

Wide-bandgap SemiconductorQuantum PhotonicsEngineeringLaser ApplicationsLaser Material +17

IL-6 and CXCL8 mediate osteosarcoma-lung interactions critical to metastasis

Amy C. Gross, Hakan Çam, Doris A. Phelps, +11

JCI Insight

Inflammatory Lung DiseaseLung InflammationImmunologyImmunotherapeuticsCancer Biology +16

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Yevgeniy Puzyrev, A. Paccagnella, Sokrates T. Pantelides, +7

IEEE Transactions on Electron Devices

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +11

Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential

John Hinckley, J. Singh

Journal of Applied Physics

EngineeringMonte Carlo MethodsHole TransportSilicon On InsulatorSemiconductor Device +14

Charged carrier transport in Si1−<i>x</i>Ge<i>x</i> pseudomorphic alloys matched to Si—strain-related transport improvements

John Hinckley, V. Sankaran, J. Singh

Applied Physics Letters

EngineeringDeformation Potential TheoryCharge TransportOut-of-plane Electron TransportSemiconductor Device +15

Summary Abstract: Material properties and clustering in molecular-beam epitaxial In0.52Al0.48As and In1−<i>x</i>−<i>y</i>Ga<i>x</i>Al<i>y</i>As

W-P. Hong, Albert Chin, Nacer Debbar, +4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceMaterial PropertiesEngineeringPhysicsCrystalline Defects +7

Calculation of electron and hole impact ionization coefficients in SiGe alloys

K. Yeom, John Hinckley, J. Singh

Journal of Applied Physics

Materials ScienceAlloy ScatteringElectrical EngineeringIon ImplantationSix-band K +13