Direct measurement of the Hall factor for holes in relaxed Si1−<i>x</i>Ge<i>x</i> (0&amp;lt;<i>x</i>&amp;lt;1)

Abstract

The Hall factor for holes in relaxed p-type Si1−xGex alloys has been determined from mobility measurements at magnetic fields up to 7 T at 290 K. Our data together with previously published values for Si and Ge suggest that r for holes in SiGe varies between 0.73 and 1.7 with a possible strong bowing.