F.-S. Chang

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C.-Y. Liao, K.-Y. Hsiang, Zaizhu Lou et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Superlattice HfO₂-ZrO₂ based Ferro-Stack HfZrO₂ FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹ cycles for Multibit NVM

C.-Y. Liao, Zhonghao Lou, Chin‐An Lin et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +13

Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂ Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K.-Y. Hsiang, Yu‐Chun Chen, F.-S. Chang et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 13 citations

Natural Sciences, Materials Engineering, Materials Science +14

Correlation between Access Polarization and High Endurance (˜ 10¹² cycling) of Ferroelectric and Anti-Ferroelectric HfZrO₂

K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin et al. · 2022 IEEE International Reliability Physics Symposium (IRPS) · 2022 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +16

Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

K.-Y. Hsiang, C.-Y. Liao, Jun Liu et al. · IEEE Electron Device Letters · 2022 · 10 citations

Natural Sciences, Electrical Engineering, Materials Science +15