Tsvetan Ivanov

(Invited) Vertical Nanowire FET Integration and Device Aspects

A. Veloso, Efrain Altamirano Sánchez, S. Brus et al. · ECS Transactions · 2016 · 49 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices

A. Alian, Mohammad Ali Pourghaderi, Yves Mols et al. · 2013 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures

Chunmeng Dou, Dennis Lin, Abhitosh Vais et al. · Microelectronics Reliability · 2014 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

Anton Potočnik, S. Brebels, Jeroen Verjauw et al. · Quantum Science and Technology · 2021 · 28 citations · Full text

Computing, Electrical Engineering, Physics +17

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Abhitosh Vais, H. C. Lin, Chunmeng Dou et al. · Applied Physics Letters · 2015 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +17