Renee Mo

Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics

Sufi Zafar, C. D’Emic, Ashish V. Jagtiani et al. · ACS Nano · 2018 · 91 citations

Reactivity of the HSi (1 1 1) surface

Jeff Terry, Renee Mo, C. Wigren et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 59 citations · Full text

Characterization of arsenic dose loss at the Si/SiO2 interface

Reza Kasnavi, Yun Sun, Renee Mo et al. · Journal of Applied Physics · 2000 · 45 citations

Chemical Engineering, Ion Implantation, Engineering +9

High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks With <italic>In-Situ</italic> O₃ Treatment

Takashi Ando, Pouya Hashemi, J. Bruley et al. · IEEE Electron Device Letters · 2017 · 44 citations

Device Modeling, Sige Channels, Electrical Engineering +11

First demonstration of high-Ge-content strained-Si<inf>1−x</inf>Ge<inf>x</inf> (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications

Pouya Hashemi, Karthik Balakrishnan, Sebastian Engelmann et al. · 2014 · 26 citations

Si-cap-free Passivation, Engineering, Insulator Pmos Finfets +16