Pouya Hashemi

Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions

Christopher Safranski, J.H. Kaiser, P. L. Trouilloud et al. · Nano Letters · 2021 · 107 citations · Full text

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

K. Cheng, A. Khakifirooz, N. Loubet et al. · 2012 · 74 citations

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 64 citations

Engineering, Vlsi Design, Device Integration +16

Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

Pouya Hashemi, Leonardo Gomez, Judy L. Hoyt · IEEE Electron Device Letters · 2009 · 56 citations · Full text

Electrical Engineering, Gaa Strained-si N-mosfets, Engineering +12

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

Leonardo Gomez, Pouya Hashemi, Judy L. Hoyt · IEEE Transactions on Electron Devices · 2009 · 48 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13