P. L. Trouilloud

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

S. Parkin, K. P. Roche, M. G. Samant et al. · Journal of Applied Physics · 1999 · 1.2K citations

Natural Sciences, Materials Engineering, Materials Science +15

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

D. C. Worledge, G. Hu, David W. Abraham et al. · Applied Physics Letters · 2011 · 703 citations

Natural Sciences, Materials Engineering, Materials Science +17

Grain-boundary effects on the magnetoresistance properties of perovskite manganite films

Alka Gupta, G. Q. Gong, Gang Xiao et al. · Physical review. B, Condensed matter · 1996 · 576 citations

Natural Sciences, Materials Science, Physics +17

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

M. Gajek, J. Nowak, J. Z. Sun et al. · Applied Physics Letters · 2012 · 289 citations

Natural Sciences, Materials Engineering, Materials Science +17

Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling

D. C. Worledge, P. L. Trouilloud · Applied Physics Letters · 2003 · 236 citations

Natural Sciences, Electrical Engineering, Materials Science +15