Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

TLDR

The study investigates spin‑torque switching in perpendicular magnetic tunnel junctions with Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. The authors report the quasistatic phase diagram of switching under applied field and voltage for these junctions. The study finds that the Ta∣CoFeB interface contributes strongly to perpendicular anisotropy, enabling low switching voltages (~290 mV at 50 ns) and ultrafast switching down to 1 ns, with speed eight times higher than comparable in‑plane devices, as predicted by a single‑domain model.

Abstract

Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta∣CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.