Y. Shimamoto

H 2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode

Y. Shimamoto, Keiko Kushida-Abdelghafar, H. Miki et al. · Applied Physics Letters · 1997 · 133 citations

Materials Science, Large-scale Integrated Fabrication, Chemical Engineering +15

Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

Shigeo Tsujikawa, Toshiyuki Mine, Kenji Watanabe et al. · 2003 · 75 citations

Electrical Engineering, Engineering, Physics +10

The impact of sub monolayers of HfO/sub 2/ on the device performance of high-k based transistors [MOSFETs]

Lars‐Åke Ragnarsson, L. Pantisano, V. Kaushik et al. · 2004 · 31 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

An oxidation barrier layer for metal–insulator–metal capacitors: ruthenium silicide

Y. Matsui, Yoshitaka Nakamura, Y. Shimamoto et al. · Thin Solid Films · 2003 · 23 citations

Electrical Engineering, Engineering, Electrochemical Interface +2

The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/ gate dielectric

Kazuyoshi Torii, Y. Shimamoto, Shinichi Saito et al. · 2003 · 18 citations

Materials Science, Electrical Engineering, Semiconductor Device +12