Setsuo Kaneko

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Kazufumi Azuma et al. · IEEE Transactions on Electron Devices · 2009 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Reverse-rotational domains in in-plane switching-mode liquid crystal displays

Teruaki Suzuki, Shinichi Nishida, Masayoshi Suzuki et al. · Journal of Applied Physics · 2001 · 55 citations

Natural Sciences, Materials Science, Crystal Structure +6

Improvement of InGaZnO₄Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

Mitsuru Nakata, Kazushige Takechi, Kazufumi Azuma et al. · Applied Physics Express · 2009 · 50 citations

Engineering, Electrical Engineering, Materials Science +15