Toshimasa Eguchi

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 174 citations

Materials Engineering, Electrical Engineering, Point Defects +15

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 127 citations

H Tfts, Engineering, Organic Electronics +16

Flexible High-Performance Amorphous InGaZnO₄Thin-Film Transistors Utilizing Excimer Laser Annealing

Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 44 citations

Optical Materials, Engineering, Laser Applications +20

Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO₄Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 29 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors

Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 18 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +16