Kazushige Takechi - Concepedia

Author

Kazushige Takechi

NEC (Japan)ORCID

Also Known As

K Takechi, K. TAKECHI, K. Takechi, Kazushige Takechi

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)NLT Technologies (Japan)Yamagata Research Institute Of Technology Japan Display (Japan)Tokyo Institute of Technology

About

Kazushige Takechi is an author at NEC (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	31	1.2K
2	Applied Physics	19	31	1.2K
3	Electrical Engineering	19	30	1.1K
4	Materials Engineering	5	5	279
5	Chemical Engineering	3	3	57

Kazushige Takechi

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO<sub>4</sub> Thin-Film Transistors Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi, Japanese Journal of Applied Physics Materials EngineeringElectrical EngineeringPoint DefectsEngineeringPhysics	2009	174
Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO<sub>4</sub> Thin-Film Transistors Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi, Japanese Journal of Applied Physics H TftsEngineeringOrganic ElectronicsOptoelectronic DevicesSilicon On Insulator	2009	127
Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays Chun-sung Chiang, Jerzy Kanicki, Kazushige Takechi Japanese Journal of Applied Physics EngineeringActive-matrix Liquid-crystal DisplaysIntegrated CircuitsSilicon On Insulatorδ V T	1998	116
Effect of Ar addition to an O2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O2/Ar mixture plasma modeling and photoresist etching Kazushige Takechi, M. A. Lieberman Journal of Applied Physics Ar AdditionEngineeringPhysicsOptical PropertiesPlasma Simulation	2001	87
Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors Kazushige Takechi, Mitsuru Nakata, Kazufumi Azuma, IEEE Transactions on Electron Devices EngineeringSemiconductor MaterialsIntegrated CircuitsThin Film Process TechnologySilicon On Insulator	2009	68
Improvement of InGaZnO<sub>4</sub>Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing Mitsuru Nakata, Kazushige Takechi, Kazufumi Azuma, Applied Physics Express Materials ScienceExcimer Laser AnnealingElectrical EngineeringSemiconductor TechnologyEngineering	2009	50
Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs Kazushige Takechi, Mitsuru Nakata, Hiroshi Kanoh, IEEE Transactions on Electron Devices EngineeringSilicon On InsulatorSelf-heating EffectsNanoelectronicsThermodynamics	2006	47
Flexible High-Performance Amorphous InGaZnO<sub>4</sub>Thin-Film Transistors Utilizing Excimer Laser Annealing Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi, Japanese Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	2009	44
High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiN<sub>x</sub>/a-Si Interface Hiroyuki Uchida, Kazushige Takechi, Shinichi Nishida, Japanese Journal of Applied Physics EngineeringThin Film Process TechnologySemiconductor DeviceSin XThin Film Processing	1991	41
High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD Toshiyuki Takagi, Kazushige Takechi, Yukito Nakagawa, Vacuum High Rate DepositionElectrical EngineeringEngineeringNanoelectronicsSurface Science	1998	34

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