Kazushige Takechi

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 174 citations

Materials Engineering, Electrical Engineering, Point Defects +15

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi et al. · Japanese Journal of Applied Physics · 2009 · 127 citations

H Tfts, Engineering, Organic Electronics +16

Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays

Chun-sung Chiang, Jerzy Kanicki, Kazushige Takechi · Japanese Journal of Applied Physics · 1998 · 116 citations

Engineering, Active-matrix Liquid-crystal Displays, Integrated Circuits +18

Effect of Ar addition to an O2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O2/Ar mixture plasma modeling and photoresist etching

Kazushige Takechi, M. A. Lieberman · Journal of Applied Physics · 2001 · 87 citations

Ar Addition, Engineering, Physics +11

Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Kazufumi Azuma et al. · IEEE Transactions on Electron Devices · 2009 · 68 citations

Engineering, Semiconductor Materials, Integrated Circuits +17