Kazufumi Azuma

Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

Kazushige Takechi, Mitsuru Nakata, Kazufumi Azuma et al. · IEEE Transactions on Electron Devices · 2009 · 68 citations

Engineering, Semiconductor Materials, Integrated Circuits +17

Improvement of InGaZnO₄Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

Mitsuru Nakata, Kazushige Takechi, Kazufumi Azuma et al. · Applied Physics Express · 2009 · 50 citations

Materials Science, Excimer Laser Annealing, Electrical Engineering +14

Optical emission spectroscopy study toward high rate growth of microcrystalline silicon

Yusuke Fukuda, Yoshikazu Sakuma, Chisato Fukai et al. · Thin Solid Films · 2001 · 48 citations

Materials Science, Photonics, Optical Materials +9

Photoinitiated ring‐opening polymerization of 2‐methylene‐1,3‐dioxepane

Takeshi Endo, Makoto Okawara, William J. Bailey et al. · Journal of Polymer Science Polymer Letters Edition · 1983 · 47 citations

Chemical Engineering, Engineering, Photochemistry +6

Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma

Takeshi Watanabe, Masahiro Tanaka, Kazufumi Azuma et al. · Japanese Journal of Applied Physics · 1987 · 38 citations

Engineering, Amorphous Silicon-germanium Films, Optoelectronic Devices +18