E.J. Lloyd

Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junctions

S. P. Murarka, D. B. Fraser, A. K. Sinha et al. · IEEE Transactions on Electron Devices · 1987 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

High temperature stability of PtSi formed by reaction of metal with silicon or by cosputtering

S. P. Murarka, E. Kinsbron, D. B. Fraser et al. · Journal of Applied Physics · 1983 · 45 citations

Engineering, Materials Engineering, Materials Science +17

A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation

C.P. Chang, C.S. Pai, F.H. Baumann et al. · 2002 · 27 citations

Engineering, Electrical Engineering, Materials Science +16

High performance 0.2 μm CMOS with 25 Å gate oxide grown on nitrogen implanted Si substrates

C.T. Liu, E.J. Lloyd, Yi Ma et al. · 2002 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Reduced electron mobility due to nitrogen implant prior to the gate oxide growth

Avid Kamgar, J.T. Clemens, A. Ghetti et al. · IEEE Electron Device Letters · 2000 · 13 citations

Engineering, Electrical Engineering, Materials Science +17