C.T. Liu

Preventing boron penetration through 25-/spl Aring/ gate oxides with nitrogen implant in the Si substrates

C.T. Liu, Yanjun Ma, H. S. Luftman et al. · IEEE Electron Device Letters · 1997 · 32 citations

Engineering, Integrated Circuits, Silicon On Insulator +17

High performance 0.2 μm CMOS with 25 Å gate oxide grown on nitrogen implanted Si substrates

C.T. Liu, E.J. Lloyd, Yi Ma et al. · 2002 · 21 citations

Electrical Engineering, μM Cmos, Engineering +13

An experimental study on the short-channel effects in undergated polysilicon thin-film transistors with and without lightly doped drain structures

C.T. Liu, K.H. Lee · IEEE Electron Device Letters · 1993 · 21 citations

Device Modeling, Electrical Engineering, Engineering +14

Steady-state photovoltaic effect in asymmetrical graded superlattices

C.T. Liu, J.M. Liu, P. A. Garbinski et al. · Physical Review Letters · 1991 · 13 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Saturation Value +15

Severe thickness variation of sub-3 nm gate oxide due to Si surface faceting, poly-Si intrusion, and corner stress

C.T. Liu, F.H. Baumann, A. Ghetti et al. · 2003 · 11 citations

Engineering, Silicon On Insulator, Semiconductor Device +16