C.A. King

A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra et al. · 2002 · 101 citations

High Performance 0.20, Engineering, Vlsi Design +19

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens et al. · 2003 · 91 citations

Lithography-independent Gate Length, Advanced Planar Mosfets, Electrical Engineering +15

An approach for fabricating high-performance inductors on low-resistivity substrates

Ya‐Hong Xie, M. Frei, Annette Becker et al. · IEEE Journal of Solid-State Circuits · 1998 · 44 citations

Electrical Engineering, Wafer Curvature, Engineering +14

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

D.-H. Kim, Jesús A. del Alamo, D.A. Antoniadis et al. · Applied Physics Letters · 2012 · 25 citations · Full text

Oxide Heterostructures, Semiconductors, Electrical Engineering +12

GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

K. Shinohara, C.A. King, Eric Regan et al. · 2019 · 24 citations

Wide-bandgap Semiconductor, Dual Gate Fets, Electrical Engineering +13