A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra, +36

High Performance 0.20EngineeringVlsi DesignComputer ArchitectureμM Cmos Technology +17

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens, +28

Lithography-independent Gate LengthAdvanced Planar MosfetsElectrical EngineeringEngineeringVlsi Design +13

An approach for fabricating high-performance inductors on low-resistivity substrates

Ya‐Hong Xie, M. Frei, Annette Becker, +4

IEEE Journal of Solid-State Circuits

Electrical EngineeringWafer CurvatureEngineeringRf SemiconductorAdvanced Packaging (Semiconductors) +12

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

D.-H. Kim, Jesús A. del Alamo, D.A. Antoniadis, +11

Applied Physics Letters

Oxide HeterostructuresSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering +10

GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

K. Shinohara, C.A. King, Eric Regan, +10

Wide-bandgap SemiconductorDual Gate FetsElectrical EngineeringLateral GateEngineering +11

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

J. M. Hergenrother, G. D. Wilk, T. Nigam, +37

Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringBias Temperature Instability +5

50 nm Vertical Replacement-Gate (VRG) pMOSFETs

Sang‐Hyun Oh, J. M. Hergenrother, T. Nigam, +35

Electrical EngineeringEngineeringVlsi DesignPlanar MosfetsNanoelectronics +9

A 50-GHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs

Yih-Feng Chyan, Michael S. Carroll, Ts. Ivanov, +15

Low-power ElectronicsWireless CommunicationsElectrical EngineeringEngineeringVlsi Design +11

E-mode planar L<inf>g</inf> = 35 nm In<inf>0.7</inf>Ga<inf>0.3</inf>As MOSFETs with InP/Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> (EOT = 0.8 nm) composite insulator

D.-H. Kim, P. Hundal, A. Papavasiliou, +10

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringComposite Insulator +11

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

J. M. Hergenrother, G. D. Wilk, T. Nigam, +37

Materials ScienceGate DielectricsElectrical EngineeringEngineeringMosfet Geometry +11