Hee-Hwan Ji

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Jang-Gn Yun, Soon-Young Oh, Bin-Feng Huang et al. · IEEE Electron Device Letters · 2005 · 14 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide

Yong‐Jin Kim, Chel‐Jong Choi, Ranju Jung et al. · Journal of The Electrochemical Society · 2005 · 11 citations

Materials Science, Materials Engineering, Structural Properties +15

Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

Misuk Bae, Hee-Hwan Ji, Hun-Jin Lee et al. · Japanese Journal of Applied Physics · 2004 · 10 citations

New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs

In‐Shik Han, Hee-Hwan Ji, Ook-Sang You et al. · IEEE Transactions on Electron Devices · 2008 · 10 citations

Strained Silicon Cmosfets, Engineering, Reliability Characteristics +19