T.B. Joyce

Transition from electron accumulation to depletion at InGaN surfaces

T. D. Veal, P. H. Jefferson, Louis F. J. Piper et al. · Applied Physics Letters · 2006 · 98 citations · Full text

Wide-bandgap Semiconductor, Engineering, Fermi-level Pinning +16

Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon

M. A. Moram, Z. H. Barber, C. J. Humphreys et al. · Journal of Applied Physics · 2006 · 54 citations

Materials Science, Scn Films, Engineering +15

A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy

Richard Beanland, Mark Aindow, T.B. Joyce et al. · Journal of Crystal Growth · 1995 · 52 citations

Materials Science, Surface Cross-hatch, Engineering +10

Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

S. Davies, T. S. Huang, M Gass et al. · Applied Physics Letters · 2004 · 50 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer

M. A. Moram, Menno J. Kappers, T.B. Joyce et al. · Journal of Crystal Growth · 2007 · 46 citations

Engineering, Physics, Surface Science +4