T.B. Joyce - Concepedia

Author

T.B. Joyce

University of Liverpool

Also Known As

Joyce, T, T B Joyce, T Joyce, T. B. F. Joyce, T. B. Joyce, T.B Joyce, T.B. Joyce, T.B.F. Joyce, Timothy B. Joyce

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

University of Liverpool Imperial College London University of Cambridge University of Essex Fraunhofer Institute for Applied Solid State Physics

About

T.B. Joyce is an author at University of Liverpool specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	31	908
2	Applied Physics	21	30	886
3	Natural Sciences	6	6	153
4	Chemistry	3	3	94
5	Computer Engineering	1	1	19

T.B. Joyce

Publications

944

Citations

H-Index

Page 1

	Year	Citations
Transition from electron accumulation to depletion at InGaN surfaces T. D. Veal, P. H. Jefferson, Louis F. J. Piper, Applied Physics Letters Wide-bandgap SemiconductorEngineeringFermi-level PinningSemiconductorsElectron Spectroscopy	2006	98
Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon M. A. Moram, Z. H. Barber, C. J. Humphreys, Journal of Applied Physics Materials ScienceScn FilmsEngineeringCrystalline DefectsNanotechnology	2006	54
A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy Richard Beanland, Mark Aindow, T.B. Joyce, Journal of Crystal Growth Materials ScienceSurface Cross-hatchEngineeringMisfit Dislocation StructureDislocation Interaction	1995	52
Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices S. Davies, T. S. Huang, M Gass, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringGan CantileversEngineering	2004	50
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer M. A. Moram, Menno J. Kappers, T.B. Joyce, Journal of Crystal Growth EngineeringPhysicsSurface ScienceApplied PhysicsAluminum Gallium Nitride	2007	46
Di-Carbon Defects in Annealed Highly Carbon Doped GaAs J. Wagner, R. C. Newman, BR Davidson, Physical Review Letters EngineeringPhysicsNatural SciencesDi-carbon DefectsC-c Split	1997	44
CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors T.B. Joyce, T.J. Bullough, P. Kightley, Journal of Crystal Growth Materials ScienceMaterials EngineeringAmine-alane PrecursorsEngineeringCrystal Growth Technology	1992	42
Photoreflectance characterization of OMVPE GaAs on Si N. Bottka, D. Kurt Gaskill, R.J.M. Griffiths, Journal of Crystal Growth Optical MaterialsEngineeringOptical PropertiesApplied PhysicsSemiconductor Material	1988	42
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides S. Mazzucato, Richard J. Potter, Ayşe Erol, Physica E Low-dimensional Systems and Nanostructures Boron NitrideEngineeringPhysicsDilute NitridesCubic Boron Nitride	2003	38
Microstructure of epitaxial scandium nitride films grown on silicon M. A. Moram, T.B. Joyce, Paul R. Chalker, Applied Surface Science Materials EngineeringMaterials ScienceEngineeringApplied PhysicsEpitaxial Scandium	2006	35

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