A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy

Defects in epitaxial multilayers

J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1975 · 534 citations

Natural Sciences, Materials Science, Physics +12

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, G. P. Watson, R.E. Proano et al. · Journal of Applied Physics · 1989 · 312 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

F. K. LeGoues, B.S. Meyerson, J. F. Morar et al. · Journal of Applied Physics · 1992 · 267 citations

Natural Sciences, Materials Science, Physics +17

Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh, M. A. Capano, L. W. Hobbs et al. · Journal of Applied Physics · 1988 · 207 citations

Natural Sciences, Materials Science, Physics +17

Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates

Hiromitsu Asai · Journal of Crystal Growth · 1987 · 194 citations

Engineering, Materials Engineering, Materials Science +14