Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

Domain epitaxy: A unified paradigm for thin film growth

J. Narayan, B. C. Larson · Journal of Applied Physics · 2002 · 584 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of poly- and single-crystal ScN on MgO(001): Role of low-energy N2+ irradiation in determining texture, microstructure evolution, and mechanical properties

Daniel Gall, I. Petrov, Niklas Hellgren et al. · Journal of Applied Physics · 1998 · 247 citations

Natural Sciences, Materials Engineering, Materials Science +16

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

H. Marchand, Lingyan Zhao, N. Zhang et al. · Journal of Applied Physics · 2001 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Thermal stability of GaN on (1 1 1) Si substrate

Hiroyasu Ishikawa, Kensaku Yamamoto, Takashi Egawa et al. · Journal of Crystal Growth · 1998 · 179 citations

Engineering, Materials Engineering, Materials Science +13