T. Maruyama

A 113mm2 32Gb 3b/cell NAND flash memory

T. Futatsuyama, Norihiro Fujita, Naoya Tokiwa et al. · 2009 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 146-<tex>$hbox mm^2$</tex>8-Gb Multi-Level NAND Flash Memory With 70-nm CMOS Technology

T. Hara, Koichi Fukuda, K. Kanazawa et al. · IEEE Journal of Solid-State Circuits · 2005 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17

Extended data retention process technology for highly reliable flash EEPROMs of 10/sup 6/ to 10/sup 7/ W/E cycles

F. Arai, T. Maruyama, R. Shirota · 1998 · 34 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

K. Kanda, Masaru Koyanagi, Toshio Yamamura et al. · 2008 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +14

A High-performance Multi-level NAND Flash Memory with 43nm-node Floating-gate Technology

Munetaka Noguchi, Toshitake Yaegashi, Hiroshi Koyama et al. · 2007 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +14