Concepedia
Statistics
Publications
6
Citations
96
H-Index
Active since
2002
Affiliations
Toshiba (Japan)(Current)
Nara Institute of Science and Technology
Toshitake Yaegashi is an author at Toshiba (Japan) specializing in electrical engineering, memory devices, and engineering.
Publications per year
2002–2009
A 120mm<sup>2</sup> 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
K. Kanda, Masaru Koyanagi, Toshio Yamamura et al. · 2008 · 24 citations
Engineering, Computer Engineering, Electrical Engineering +14
A novel high-density 5F/sup 2/ NAND STI cell technology suitable for 256 Mbit and 1 Gbit flash memories
Kazuhiro Shimizu, K. Narita, Hiroshi Watanabe et al. · 2002 · 20 citations
Engineering, Computer Engineering, Electrical Engineering +15
Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics
Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki et al. · Japanese Journal of Applied Physics · 2009 · 15 citations
Engineering, Electrical Engineering, Materials Science +16
A self-aligned STI process integration for low cost and highly reliable 1 Gbit flash memories
Yoshinori Takeuchi, Kazuhiro Shimizu, K. Narita et al. · 2002 · 13 citations
Engineering, Computer Engineering, Electrical Engineering +17
A High-performance Multi-level NAND Flash Memory with 43nm-node Floating-gate Technology
Munetaka Noguchi, Toshitake Yaegashi, Hiroshi Koyama et al. · 2007 · 12 citations
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