K. Ohtsuka - Concepedia

Author

K. Ohtsuka

Mitsubishi Electric (Japan)

Also Known As

K Ohtsuka, K. Ohtsuka, Ken Ichi Ohtsuka, Ohtsuka, K.

Publications

235

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Electric (Germany)

About

K. Ohtsuka is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	144
2	Applied Physics	7	7	126
3	Chemistry	2	2	37
4	Chemical Engineering	1	1	11
5	Computer Engineering	1	1	22

K. Ohtsuka

Publications

180

Citations

H-Index

Page 1

	Year	Citations
Corona discharges and bubbling in liquid nitrogen Yoshito Takahashi, K. Ohtsuka Journal of Physics D Applied Physics Liquid NitrogenGlow DischargeFluid MechanicsCorona Inception VoltageGas Discharge Plasma	1975	36
Photoluminescence characterization of InP surface reactive ion etched by a gas mixture of ethane and hydrogen K. Ohtsuka, T. Ohishi, Yuji Abe, Journal of Applied Physics Optical MaterialsEngineeringPhotoluminescence CharacterizationChemistryLuminescence Property	1991	26
Successful Enhancement of Lifetime for SiO&lt;tex&gt;$_2$&lt;/tex&gt;on 4H-SiC by N&lt;tex&gt;$_2$&lt;/tex&gt;O Anneal Keiko Fujihira, Natsuko Miura, K. Shiozawa, IEEE Electron Device Letters Materials EngineeringMaterials ScienceElectrical EngineeringOxide LifetimeEngineering	2004	22
Leakage current in Ti/4H-SiC Schottky barrier diode K. Ohtsuka, Y. Matsuno, Kenichi Kuroda, Physica B Condensed Matter Electrical EngineeringEngineeringApplied PhysicsMicroelectronicsSemiconductor Device	2006	21
Performance of 1.5 mu m DFB lasers with a narrow stripe region Junichi Kinoshita, K. Ohtsuka, H. Agatsuma, IEEE Journal of Quantum Electronics Axial Hole BurningEngineeringLaser ScienceOptical Transmission SystemLaser Applications	1991	18
High-purity In0.53Ga0.47As layer grown by liquid phase epitaxy K. Ohtsuka, T. Ohishi, Yuji Abe, Journal of Crystal Growth Materials ScienceHigh-purity In0.53ga0.47as LayerEngineeringCrystal Growth TechnologyApplied Physics	1988	17
Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor T. Ohishi, Yusuke Abe, Hiroshi Sugimoto, Electronics Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringElectronic Engineering	1990	15
GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching T. Matsui, Hiroshi Sugimoto, K. Ohtsuka, Electronics Letters Monitor PhotodiodeEngineeringLaser ScienceHigh-power Laser TechnologyLaser Applications	1989	14
Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen K. Ohtsuka, Mitsuru Imaizumi, Hiroshi Sugimoto, Applied Physics Letters EngineeringChemistryReactive Ion EtchingGas MixturePlasma Processing	1992	11

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